Aluminum Nitride (AlN) is emerging as a versatile platform for developing integrated photonic devices for quantum technologies and various other applications. This is due to its electro-optic and acousto-optic properties, wide transparency spectral range covering from ultraviolet (UV) to Infrared (IR), and compatibility with standard CMOS fabrication techniques. These properties are essential for precise light control in neutral atom and trapped-ion-based quantum systems.
Suat Icli from Physikalisch-Technische Bundesanstalt, PTB, recently presented his work at the 𝗦𝗣𝗜𝗘 𝗢𝗽𝘁𝗶𝗰𝘀 + 𝗢𝗽𝘁𝗼𝗲𝗹𝗲𝗰𝘁𝗿𝗼𝗻𝗶𝗰𝘀 𝟮𝟬𝟮𝟱 conference, demonstrating the design of an AlN-based
electro-optic phase modulator and photonic switch for PIC-based ion traps and quantum technologies.
He studied the electrical and optical behavior of the designed devices, contributing to the next generation of scalable photonic platforms, a major goal of Qu-PIC – Horizon Europe.
