🚀 Discover cutting‑edge photonic detection in FDSOI technology! 🚀
Our project partner, the University of Twente, recently reported on ultrathin‑body SOI PIN‑diodes (Si film ≈ 6 nm) fabricated in a standard commercial FDSOI flow with 𝗻𝗼 𝗲𝘅𝘁𝗿𝗮 𝗽𝗿𝗼𝗰𝗲𝘀𝘀 𝘀𝘁𝗲𝗽𝘀 𝗻𝗲𝗲𝗱𝗲𝗱. By harnessing the electrostatic back‑gate, the authors unveiled a simple, purely electrical method to dial in the optimal bias for peak optical responsivity. At zero diode bias and ideal back‑gate tuning, these devices deliver 𝗮 𝗿𝗲𝗰𝗼𝗿𝗱 𝗿𝗲𝘀𝗽𝗼𝗻𝘀𝗶𝘃𝗶𝘁𝘆 of 62 μA/W at λ = 850 nm, with a ‑3 dB bandwidth of 5.9 GHz (‑6 dB at 15 GHz).
𝗪𝗵𝘆 𝗶𝘁 𝗺𝗮𝘁𝘁𝗲𝗿𝘀:
☄️ High-speed optical sensing: Response up to 15 GHz—ideal for 𝗻𝗲𝘅𝘁‑𝗴𝗲𝗻 𝗼𝗽𝘁𝗶𝗰𝗮𝗹 𝗹𝗶𝗻𝗸𝘀 𝗮𝗻𝗱 𝗧𝗛𝘇‑𝗿𝗮𝗻𝗴𝗲 𝗰𝗶𝗿𝗰𝘂𝗶𝘁𝘀.
🔎 Process‑monitoring & hybrid integration: Leverage FDSOI’s unique back‑gate to merge bulk and SOI device functionalities—perfect for 𝗼𝗻‑𝗰𝗵𝗶𝗽 𝘀𝗲𝗻𝘀𝗼𝗿𝘀 𝗮𝗻𝗱 𝗶𝗻‑𝗹𝗶𝗻𝗲 𝗽𝗿𝗼𝗰𝗲𝘀𝘀 𝗰𝗼𝗻𝘁𝗿𝗼𝗹.
✅ Zero‑overhead fabrication: Integrate advanced photonic PIN‑diodes 𝘄𝗶𝘁𝗵𝗼𝘂𝘁 𝗺𝗼𝗱𝗶𝗳𝘆𝗶𝗻𝗴 𝘆𝗼𝘂𝗿 𝗳𝗼𝘂𝗻𝗱𝗿𝘆 𝗿𝗲𝗰𝗶𝗽𝗲.
Read the full paper to explore how back‑gate tuning can revolutionize optical detection and open pathways to novel sensors, high‑frequency circuits, and seamless hybrid integration in FDSOI platforms 👉 Qu-PIC’s publications
