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QU-PIC poster presentations at ICNS-15

Qu-PIC at the 15th International Conference on Nitride Semiconductors (ICNS-15)

Last week, some of the greatest minds in the field gathered in Malmรถ, Sweden, to celebrate the 15th International Conference on Nitride Semiconductors (ICNS-15).

Qu-PIC – Horizon Europe was well represented by ๐—ง๐—ต๐—ฎ๐—ป๐—ต ๐—ฃ๐—ต๐˜‚๐—ฐ ๐—ก๐—ด๐˜‚๐˜†๐—ฒ๐—ป from Chalmers University of Technology and Massimo Grigoletto from Technische Universitรคt Berlin.

Thanh’s poster presented a ๐˜€๐—ฒ๐—น๐—ฒ๐—ฐ๐˜๐—ถ๐˜ƒ๐—ฒ ๐—น๐—ถ๐—ณ๐˜-๐—ผ๐—ณ๐—ณ ๐—ฎ๐—ฝ๐—ฝ๐—ฟ๐—ผ๐—ฎ๐—ฐ๐—ต ๐—ณ๐—ผ๐—ฟ ๐—จ๐—ฉ๐—– ๐—ฑ๐—ฒ๐˜ƒ๐—ถ๐—ฐ๐—ฒ๐˜€, ๐—ฒ๐—ป๐—ฎ๐—ฏ๐—น๐—ถ๐—ป๐—ด ๐˜€๐—ฐ๐—ฎ๐—น๐—ฎ๐—ฏ๐—น๐—ฒ ๐—ถ๐—ป๐˜๐—ฒ๐—ด๐—ฟ๐—ฎ๐˜๐—ถ๐—ผ๐—ป. This novel approach overcomes a long-standing hurdle in fabricating deepโ€‘UV (UVC) emitters: the selective liftโ€‘off of Alโ€‘rich AlGaN layers. Using photoโ€‘assisted electrochemical etching (PECE), Thanh’s team achieved complete etching of sacrificial layers with up to 65% Al content, without damaging adjacent layers.

This breakthrough paves the way for thinner, smoother membranes that support nextโ€‘generation ๐—จ๐—ฉ๐—– ๐—Ÿ๐—˜๐——๐˜€, ๐—ฉ๐—–๐—ฆ๐—˜๐—Ÿ๐˜€, ๐—ฎ๐—ป๐—ฑ ๐—ถ๐—ป๐˜๐—ฒ๐—ด๐—ฟ๐—ฎ๐˜๐—ฒ๐—ฑ ๐—ฝ๐—ต๐—ผ๐˜๐—ผ๐—ป๐—ถ๐—ฐ ๐—ฝ๐—น๐—ฎ๐˜๐—ณ๐—ผ๐—ฟ๐—บ๐˜€. By enabling more compact and efficient devices, it opens new opportunities in disinfection, environmental sensing, and advanced communication technologies.

Massimo’s poster, on the other hand, focused on optimizing ๐—จ๐—ฉ๐—– ๐—น๐—ฎ๐˜€๐—ฒ๐—ฟ ๐—ฝ๐—ฒ๐—ฟ๐—ณ๐—ผ๐—ฟ๐—บ๐—ฎ๐—ป๐—ฐ๐—ฒ ๐˜๐—ต๐—ฟ๐—ผ๐˜‚๐—ด๐—ต ๐˜€๐˜‚๐—ฏ๐˜€๐˜๐—ฟ๐—ฎ๐˜๐—ฒ ๐—ฒ๐—ป๐—ด๐—ถ๐—ป๐—ฒ๐—ฒ๐—ฟ๐—ถ๐—ป๐—ด. He demonstrated how controlling surface morphology can dramatically improve the performance of AlGaN-based UVC lasers. By systematically varying the sapphire substrate miscut angle and cladding layer thickness, Massimo’s team showed that reducing hexagonal hillocks leads to smoother growth surfaces and significantly lower pumping thresholds.

Lasers grown on 0.5ยฐ offcut substrates exhibited stepโ€‘flow growth with minimal roughness and achieved net modal gains of ~40โ€ฏcmโปยน at 5โ€ฏMW/cmยฒ, requiring far less excitation power than devices on lower offcut substrates. These findings highlight how precise substrate engineering can unlock ๐—ต๐—ถ๐—ด๐—ต๐—ฒ๐—ฟ ๐—ฒ๐—ณ๐—ณ๐—ถ๐—ฐ๐—ถ๐—ฒ๐—ป๐—ฐ๐˜† ๐—ฎ๐—ป๐—ฑ ๐—ฟ๐—ฒ๐—น๐—ถ๐—ฎ๐—ฏ๐—ถ๐—น๐—ถ๐˜๐˜† ๐—ถ๐—ป ๐—ป๐—ฒ๐˜…๐˜โ€‘๐—ด๐—ฒ๐—ป๐—ฒ๐—ฟ๐—ฎ๐˜๐—ถ๐—ผ๐—ป ๐—จ๐—ฉ๐—– ๐˜€๐—ผ๐˜‚๐—ฟ๐—ฐ๐—ฒ๐˜€.

Visit our website for more information on Chalmers’ and TU Berlin’s contributions to Qu-PIC ๐Ÿ‘‰ https://lnkd.in/dmZVHNXn

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